美國(guó)德州大學(xué)達(dá)拉斯分校副校長(zhǎng)Gnade教授來訪北理工
發(fā)布日期：2015-11-16 供稿：光電學(xué)院 唐義,、常月娥 攝影：張麗君
編輯：光電學(xué)院 郭明娟 閱讀次數(shù)： 應(yīng)北京理工大學(xué)光電學(xué)院邀請(qǐng)，德州大學(xué)達(dá)拉斯分校副校長(zhǎng),，OLED顯示領(lǐng)域著名專家布魯斯·葛內(nèi)德（Bruce Gnade）教授于2015年10月28日-11月3日來我校光電學(xué)院訪問交流。雙方召開了教學(xué)合作研討會(huì),，就加強(qiáng)兩校學(xué)生的交流與培養(yǎng)進(jìn)行了研討。國(guó)際合作處,、教務(wù)處領(lǐng)導(dǎo),，光電學(xué)院有關(guān)院領(lǐng)導(dǎo)、學(xué)科責(zé)任教授及各研究所主管教學(xué)副所長(zhǎng)參加了本次研討,。訪問期間在訪問期間,，葛內(nèi)德副校長(zhǎng)為光電學(xué)院本科生講授了《OLED顯示技術(shù)》課程。
10月30日上午召開了光電學(xué)院與德州大學(xué)達(dá)拉斯分校教學(xué)合作研討會(huì),。黃一帆副院長(zhǎng)介紹了光電學(xué)院在教學(xué)和本科生國(guó)際交流方面的基本情況,；唐義副教授做了《關(guān)于“光電顯示技術(shù)”課程教學(xué)與課群建設(shè)構(gòu)想》報(bào)告，介紹了光電學(xué)院面向光電信息工程專業(yè)本科生,、“卓越工程師計(jì)劃”以及未來服務(wù)于北京市雙培計(jì)劃的光電顯示技術(shù)課程建設(shè)構(gòu)想,，尤其依托國(guó)內(nèi)、外優(yōu)勢(shì)單位在共同授課,、合作編寫教材以及建設(shè)顯示技術(shù)教學(xué)實(shí)踐基地方面的設(shè)想,。葛內(nèi)德教授介紹了德州大學(xué)達(dá)拉斯分校在半導(dǎo)體器件、顯示技術(shù)領(lǐng)域教學(xué),、科研成果及實(shí)驗(yàn)室條件,，及雙方在合作教學(xué)方面的可能性。國(guó)際合作處處長(zhǎng)唐水源教授介紹了北京理工學(xué)在國(guó)外人才引進(jìn)方面的政策,。教務(wù)處徐瑾副處長(zhǎng)介紹了理工大學(xué)本科教學(xué)方面的國(guó)際合作項(xiàng)目和國(guó)際合作開展情況,。教務(wù)處曹峰梅副處長(zhǎng)對(duì)課程的發(fā)展和規(guī)劃給出了建議,。雙方在本科生畢業(yè)設(shè)計(jì)和研究生交流方面達(dá)成合作的基本意向。
光電學(xué)院與德州大學(xué)達(dá)拉斯分校教學(xué)合作研討會(huì)
在訪問期間,，葛內(nèi)德副校長(zhǎng)及隨行助手賈會(huì)平研究員在3號(hào)樓302教室為光電學(xué)院光電信息工程專業(yè)本科四年級(jí)同學(xué)講授了《光電顯示技術(shù)》課程中的《OLED顯示技術(shù)》部分,。學(xué)生們認(rèn)為葛內(nèi)德教授上課充滿激情，詼諧生動(dòng),，講課內(nèi)容豐富,，當(dāng)學(xué)生們了解到OLED顯示技術(shù)發(fā)展奠基人鄧青云博士為華人時(shí)，學(xué)生產(chǎn)生了極大的自豪感,。賈會(huì)平研究員和唐義副教授對(duì)課件的關(guān)鍵詞語進(jìn)行了中文對(duì)照,，并就課程中的部分難點(diǎn)和重點(diǎn)問題進(jìn)行翻譯和解釋。
葛內(nèi)德教授在3#302教室為本科生講課
美國(guó)德州大學(xué)達(dá)拉斯分校是全美著名公立大學(xué),，學(xué)校工科排名70,。其緊鄰德州儀器(TI)，AT&T,，三星,，思科，阿爾卡特,，華為等高科技企業(yè),。其在工科，尤其是半導(dǎo)體和顯示器件方面具有雄厚的基礎(chǔ),。作為一所建校不滿50年的年輕的大學(xué),，憑借其地理位置與財(cái)力優(yōu)勢(shì)，發(fā)展迅速,，是全美進(jìn)步最快的高校,。光電院已從2012年起與德州大學(xué)達(dá)拉斯分校開展接觸、合作,，開展新光源與顯示技術(shù)實(shí)驗(yàn)室的論證和建設(shè),。2014年學(xué)院派青年教師到該校的材料科學(xué)與工程系訪學(xué)，在OLED顯示器件著名專家,、德州大學(xué)科研副校長(zhǎng)布魯斯•葛內(nèi)德教授支持下,，對(duì)該校的教學(xué)和大型公共實(shí)驗(yàn)室等硬件條件有了深入的了解。德州大學(xué)達(dá)拉斯分校的技術(shù)與學(xué)科優(yōu)勢(shì)將對(duì)光電院未來在顯示器件與技術(shù)的教學(xué)和科研等方面將有很大的促進(jìn),。 此次葛內(nèi)德副校長(zhǎng)的來訪得到了我校國(guó)際交流與合作處和教務(wù)處的大力支持,，葛內(nèi)德教授的此次訪問將為兩校的進(jìn)一步加深合作交流奠定良好基礎(chǔ)。
葛內(nèi)德（Bruce Gnade）教授簡(jiǎn)介：
Bruce Gnade received his BA in Chemistry from St. Louis University in 1976 and his Ph.D. in Nuclear Chemistry from Georgia Institute of Technology in 1982. He joined the faculty at University of Texas at Dallas (UTD) in 2003 as a professor of materials science and engineering. He is currently Vice President for Research of UTD and Distinguished Chair in Microelectronics.
Prof. Bruce Gnade has a unique combination of experience in industry (Texas Instruments), the Federal Government (Defense Advanced Research Projects Agency - DARPA), and academia (Univ. of North Texas and Univ. of Texas at Dallas). He has been recognized for his contributions in the field of electronic and display related materials. He initiated several materials-related activities at TI for scaled silicon CMOS, with critical patents in xerogels for use as interlevel dielectrics, materials and processes for field emission and digital mirror device displays, and very high-k dielectrics for DRAM capacitors. These patents have been referenced over 2000 times. He was a leader in the development of field emission display technology, providing critical insight into the degradation mechanisms that affect the long term stability of field emission cathodes and low voltage phosphors. Also at TI, he worked with the digital light processing (DLP) group to improve long term reliability by understanding the role of stiction forces and hinge fatigue in MEMS devices. His work at TI and UT Dallas have led to 72 U.S. and 54 foreign patents, where he is an inventor or co-inventor. Dr. Gnade spent three years at DARPA as a program manager, where he initiated Dept of Defense programs in molecular electronics, flexible displays, and the heterogeneous integration of multiple device technologies on silicon. While at DARPA he managed the advanced display technology program for the U.S. Department of Defense, supporting technology development in plasma, field emission, organic light emitting diode and MEMs-based displays for use in DoD applications. After leaving DARPA, he served as chair of the Materials Science Department at University of North Texas for three years, before joining the University of Texas at Dallas where he is now the Distinguished Chair in Microelectronics and the Vice President for Research. His research since joining academia has focused on electronic materials for scaled CMOS, flexible electronics and displays, and recently bioelectronic devices. This work has achieved widespread recognition and has formed the basis for over millions of dollars in grants or research contracts in the past 5 years.
Dr. Gnade has 150 publications in peer-reviewed journals and over 70 publications in conference proceedings that he has authored or co-authored. These publications have been cited over 4000 times.
Dr. Gnade have served numerous professional organizations that include Advisory Committee, 3rd and 4th International Conf. on Science and Tech. of Display Phosphors; Co-Chair SPIE Conference on Liquid Crystal Materials, Devices, and Flat Panel Displays, Jan. 1999, 2000; Technical Committee for Emissive Displays, Society for Information Displays Int. Symp. (2002-present); United States Civilian Research and Development Foundation, Electronics review panel, 2000-present; Nanotechnology Foundation's Scientific Advisory Board (2003-Present); National Academies Board of Assessment of NIST Programs-EEEL, Chair of SED subpanel (2004-presnt); Associate Editor, IEEE/OSA Journal of Display Technology (2004-2008); Chair of Publications Committee, Society of Information Display (2009-present).
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